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S102S11/S102S12/S202S11/S202S12
S102S11/S102S12 S202S11/S202S12
s Features
1. High radiation resin mold package 2. Built-in snubber circuit 3. Built-in zero-cross circuit ( S102S12/S202S12) 4. High repetitive peak OFF-state voltage S102S11/S102S12 V DRM : 400V S202S11/S202S12 V DRM : 600V 5. RMS ON-state current I T : MAX. 8Arms at TC <= 88C ( With heat sink) 6. Isolation voltage between input and output ( Viso : 4 000Vrms ) 7. Recognized by UL, file No. E94758 Approved by CSA, No. LR63705
SIP Type SSR with Snubber Circuit and Mouning Capability for External Heat Sink
s Outline Dimensions (Unit : mm )
* The metal parts marked * are common to terminal 1 . g Do not allow external connection. ( ) : Typical dimensions 18.5 0.2 16.4 0.3 3.2 0.2
A (Model No.) B S102S11 8A135VAC S102S12 S202S11 8A250VAC S202S12
3.2 0.2
5.5 0.2 5.0 0.3
*
g 0.2 MAX.
A B +4.2MAX.
1
2
3
4
11.2MIN. 0.6 0.1
4 4 4
- 1.1 0.2 - 1.25 0.3 - 0.8 0.2
19.6 0.2 (36.0)
s Applications
1. Automatic vending machines 2. Amusement equipment 3. Programmable controllers
(5.08) (7.62) Internal connection diagram S102S11 /S202S11
(2.54)
(1.4)
S102S12 /S202S12
Zero-cross circuit 1 2 34 1 2 3 4 12 34
s Model line-ups
For 100V lines Built-in snubber circuit Built-in snubber circuit and zero-cross circuit S102S11 For 200V lines S202S11
1 2 3 4
Output ( Triac T2 ) Output ( Triac T1 ) Input ( + ) Input ( - )
Output ( Triac T2 ) Output ( Triac T1 ) Input ( + ) Input ( - )
S102S12
S202S12
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
S102S11/S102S12/S202S11/S202S12 s Absolute Maximum Ratings
Input Parameter Forward current Reverse voltage RMS ON-state current *1 Peak one cycle surge current Repetitive peak-OFF state voltage Non-repetitive peak-OFF state voltage Critical rate of rise of ON-state current Isolation voltage Operating temperature Storage temperature *3 Soldering temperature
*2
( Ta = 25C )
Symbol IF VR IT I surge S102S11/S102S12 S202S11/S202S12 S102S11/S102S12 S202S11/S202S12 V DRM V DSM dIT /dt V iso T opr T stg T sol S102S11/S102S12 S202S11/S202S12 V out Rating 50 6 *4 8 80 400 600 400 600 50 4 000 - 20 to + 80 - 30 to + 100 260 135 250 Unit mA V A rms A V V A/ s V rms C C C V rms
Output
Load supply voltage
*1 50Hz sine wave, start at Tj= 25C *2 60Hz AC for 1 minute, RH= 40 to 60% , Apply voltages between input and output, by the dielectric withstand voltage tester with zero-cross circuit. ( Input and output shall be shorted respectively) . ( Note) When the isolation voltage is necessary at using external hear sink, please use the insulation sheet. *3 For 10 seconds *4 Tc <= 88C
s Electro-optical Characteristics
Parameter Forward voltage Reverse current ON-state voltage Minimum Operating current Symbol VF IR VT Conditions IF = 20mA VR = 3V IT = 2Arms Vout = 120Vrms Vout = 240Vrms Vout = 120Vrms Vout = 240Vrms VD = 2/3V
DRM
( Ta = 25C )
MIN. 30 5 10 10 TYP. 1.2 4.0 40 MAX. 1.4 10 - 4 1.5 50 5 10 35 8 8 1 9.3 9.3 Unit V A V rms mA rms mA rms V/ s V/ s V mA mA ms ms ms C/W C/W
Input
S102S11/S102S12 Iop S202S11/S202S12 S102S11/S102S12 Open circuit I leak leak current S202S11/S202S12 Output Critical rate of rise of OFF-state dV/dt voltage Critical rate of rise of ( dV/dt ) C Commutating OFF-state voltage Zero-cross voltage S102S12/S202S12 V OX S102S11/S202S11 Minimum trigger I FT current S102S12/S202S12 Transfer Isolation resistance R ISO characS102S11/S202S11 teristics Turn-on time t on S102S12/S202S12 Turn-off time t off Thermal resistance Rth(j - c) ( Between junction and case ) Thermal resistance Rth(j - a) ( Between junction and ambience )
Tj = 125 C dI t /dt = - 4.0A/ms, *5
IF = 8mA VD = 12V, R L = 30 VD = 6V, R L = 30 DC500V, RH = 40 to 60 % AC60Hz AC60Hz -
*5 S102S11/S102S12 : V D= 400V S202S11/S202S12 : V D= 600V
S102S11/S102S12/S202S11/S202S12
Fig. 1 RMS ON-state Current vs. Case Temperature
10
Fig. 2 RMS ON-state Current vs. Ambient Temperature
5
RMS ON-state current I T ( Arms )
RMS ON-state current I T ( Arms )
8
4
6
3
4
2
2
1
0 - 20
60
70 80 90 100 110 Case temperature T C ( C)
120
130
0 - 20
0
20 40 60 80 Ambient temperature T a ( C )
100
Fig. 3 Forward Current vs. Forward Voltage ( Typical Value )
100
Fig. 4 Surge Current vs. Power-on Cycle
100 f = 50H z Sine wave T j = 25C Start 80
Forward current I F ( mA )
25C 0C - 25C
Surge current I surge ( A )
T a = 100C 75C 50C 10
60
40
20
1
0
1.0 Forward voltage V F ( V )
2.0
0 1
2
5 10 20 Power-on cycle ( Times )
50
100
Fig. 5 Maximum ON-state Power Dissipation vs. RMS ON-state Current ( Typical Value)
10 T a = 25C Maximum ON-state power dissipation ( W )
Fig. 6 Minimum Trigger Current vs. Ambient Temperature ( Typical Value ) ( S102S11/S202S11 )
12 V D = 12V R L = 30 Minimum trigger current I FT ( mA ) 10
8
5
6
4
2
0
2 4 6 8 10 RMS ON-state current I T ( Arms )
12
0 - 20
0
20 40 60 80 Ambient temperature T a ( C )
100
S102S11/S102S12/S202S11/S202S12
Fig. 7 Minimum Trigger Current vs. Ambient Temperature ( Typical Value ) (S102S12 / S202S12)
12 V D = 6V R L = 30 Minimum trigger current I FT ( mA ) Open circuit leak current Ileak ( mA rms ) 10 5
Fig. 8 Open Circuit Leak Current vs. Supply Voltage ( Typical Value ) ( S102S11/S102S12 )
6 T a = 25C
8
4
6
3
4
2
2
1
0 - 20
0
20 40 60 80 Ambient temperature T a ( C )
100
0 0
100 Supply voltage ( Vrms )
160
Fig. 9 Open Circuit Leak Current vs. Supply Voltage ( Typical Value ) ( S202S11/S202S12 )
6 T a = 25C Open circuit leak current I leak ( mA rms ) 5
4
3
2
1
0 0
200 Supply voltage ( Vrms )
320
q Please refer to the chapter " Precautions for Use."

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